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| to ? 3p 1. base 2. collector 3. emitter to-3p plastic-encapsulate transistors 3DA5200C transistor (npn) features z high breakdown voltage z high current and power capacity maximum ratings (t a =25 unless otherwise noted) electrical characteristics (t a =25 unless otherwise specified) parameter symbol test conditions min typ max unit collector-base breakdown voltage v (br)cbo i c =100a,i e =0 120 v collector-emitter breakdown voltage v (br)ceo i c =50ma,i b =0 120 v emitter-base breakdown voltage v (br)ebo i e =100a,i c =0 5 v collector cut-off current i cbo v cb =120v,i e =0 5 a emitter cut-off current i ebo v eb =5v,i c =0 5 a h fe(1) v ce =5v, i c =1a 55 160 dc current gain h fe(2) v ce =5v, i c =7a 35 collector-emitter saturation voltage v ce(sat) i c =8a,i b =800ma 3 v base-emitter voltage v be v ce =5v, i c =7a 1.5 v collector output capacitance c ob v cb =10v,i e =0, f=1mhz 360 pf transition frequency f t v ce =5v,i c =1a 30 mhz classification of h fe (1) rank r o range 55-110 80-160 symbol parameter value unit v cbo collector-base voltage 120 v v ceo collector-emitter voltage 120 v v ebo emitter-base voltage 5 v i c collector current 15 a p c collector power dissipation 3 w r ja thermal resistance from junction to ambient 42 / w t j junction temperature 150 t stg storage temperature -55~+150 1 of 1 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
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